2SD849 Datasheet. Equivalente

 ..1. Size:203K  inchange semiconductor
 2sd849.pdf

isc Silicon NPN Power Transistor 2SD849 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.1. Size:242K  toshiba
 2sd845.pdf

 9.2. Size:103K  toshiba
 2sd842.pdf

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 9.3. Size:130K  toshiba
 2sd843.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.4. Size:141K  fuji
 2sd847.pdf

FUJI POWER TRANSISTOR 2SD847 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity hFE High collector current Excellent safe operating area High reliability Applications Audio amp JEDEC - Series regulators EIAJ SC-65 General purpose power amplifiers (Complementary to 2SB757) Maximum ratings and characterist

 9.5. Size:196K  cn sptech
 2sd844o 2sd844y.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD844 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 4A CE(sat) C High Collector Power Dissipation P = 60W @T =25 C C Complement to Type 2SB754 APPLICATIONS High current switching applications Power amplifier a

 9.6. Size:217K  inchange semiconductor
 2sd845.pdf

isc Silicon NPN Power Transistor 2SD845 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB755 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

 9.7. Size:213K  inchange semiconductor
 2sd847.pdf

isc Silicon NPN Power Transistor 2SD847 DESCRIPTION Good Linearity of h FE High Collector Current Wide Area of Safe Operation High Reliability Complement to Type 2SB757 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier applications Series regulators applications General purpose power amplifiers ABSOLUT

 9.8. Size:219K  inchange semiconductor
 2sd844.pdf

isc Silicon NPN Power Transistor 2SD844 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 4A CE(sat) C High Collector Power Dissipation P = 60W @T =25 C C Complement to Type 2SB754 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hi

 9.9. Size:208K  inchange semiconductor
 2sd841.pdf

isc Silicon NPN Power Transistor 2SD841 DESCRIPTION High Collector-Base Breakdown Voltage V = 800V(Min.) (BR)CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T

 9.10. Size:214K  inchange semiconductor
 2sd843.pdf

isc Silicon NPN Power Transistor 2SD843 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 4A CE(sat) C High Collector Power Dissipation Complement to Type 2SB753 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications Power amplifier application