2SD849 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SD849 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

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FUJI POWER TRANSISTOR 2SD847 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity hFE High collector current Excellent safe operating area High reliability Applications Audio amp JEDEC - Series regulators EIAJ SC-65 General purpose power amplifiers (Complementary to 2SB757) Maximum ratings and characterist

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD844 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 4A CE(sat) C High Collector Power Dissipation P = 60W @T =25 C C Complement to Type 2SB754 APPLICATIONS High current switching applications Power amplifier a

isc Silicon NPN Power Transistor 2SD845 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB755 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

isc Silicon NPN Power Transistor 2SD847 DESCRIPTION Good Linearity of h FE High Collector Current Wide Area of Safe Operation High Reliability Complement to Type 2SB757 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio amplifier applications Series regulators applications General purpose power amplifiers ABSOLUT

isc Silicon NPN Power Transistor 2SD844 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 4A CE(sat) C High Collector Power Dissipation P = 60W @T =25 C C Complement to Type 2SB754 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hi

isc Silicon NPN Power Transistor 2SD841 DESCRIPTION High Collector-Base Breakdown Voltage V = 800V(Min.) (BR)CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD843 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 4A CE(sat) C High Collector Power Dissipation Complement to Type 2SB753 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications Power amplifier application