2SD851 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD851
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 150 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 3000
Paquete / Cubierta: MT-200

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2SD851 Datasheet (PDF)

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9.2. Size:109K panasonic
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Silicon Diffused Power Transistor2SD850GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package primarily for use in horizontal deflection circuites of colour television receiversTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCollector-emitter voltage (open base)

9.6. Size:150K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

9.7. Size:212K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD855DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB760Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

9.8. Size:208K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD857DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB762Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

9.9. Size:213K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD856DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

9.10. Size:212K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD859DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

9.11. Size:217K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD858DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Otros transistores... 2SD844Y , 2SD845 , 2SD846 , 2SD847 , 2SD848 , 2SD848A , 2SD849 , 2SD850 , 9014 , 2SD852 , 2SD854 , 2SD855 , 2SD855A , 2SD855B , 2SD856 , 2SD856A , 2SD856B .