2SD851 Datasheet. Specs and Replacement
Type Designator: 2SD851 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: MT-200
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2SD851 datasheet
9.5. Size:189K wingshing
2sd850.pdf 
Silicon Diffused Power Transistor 2SD850 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package primarily for use in horizontal deflection circuites of colour television receivers TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Collector-emitter voltage (open base)... See More ⇒
9.6. Size:150K inchange semiconductor
2sd850.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER... See More ⇒
9.7. Size:212K inchange semiconductor
2sd855.pdf
isc Silicon NPN Power Transistor 2SD855 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB760 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
9.8. Size:208K inchange semiconductor
2sd857.pdf
isc Silicon NPN Power Transistor 2SD857 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB762 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
9.9. Size:213K inchange semiconductor
2sd856.pdf
isc Silicon NPN Power Transistor 2SD856 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB761 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
9.10. Size:212K inchange semiconductor
2sd859.pdf
isc Silicon NPN Power Transistor 2SD859 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
9.11. Size:217K inchange semiconductor
2sd858.pdf
isc Silicon NPN Power Transistor 2SD858 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Detailed specifications: 2SD844Y, 2SD845, 2SD846, 2SD847, 2SD848, 2SD848A, 2SD849, 2SD850, BC558, 2SD852, 2SD854, 2SD855, 2SD855A, 2SD855B, 2SD856, 2SD856A, 2SD856B
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