2SD858B Todos los transistores

 

2SD858B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD858B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de transistor bipolar 2SD858B

 

2SD858B Datasheet (PDF)

5.1. 2sd856.pdf Size:111K _panasonic

2SD858B
2SD858B

5.2. 2sd857.pdf Size:109K _panasonic

2SD858B
2SD858B

 5.3. 2sd855.pdf Size:88K _panasonic

2SD858B
2SD858B

5.4. 2sd856.pdf Size:47K _no

2SD858B

 5.5. 2sd851.pdf Size:34K _no

2SD858B

5.6. 2sd850.pdf Size:189K _wingshing

2SD858B

Silicon Diffused Power Transistor 2SD850 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package primarily for use in horizontal deflection circuites of colour television receivers TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Collector-emitter voltage (open base) V

5.7. 2sd856.pdf Size:270K _inchange_semiconductor

2SD858B
2SD858B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD856 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB761 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collect

5.8. 2sd857.pdf Size:239K _inchange_semiconductor

2SD858B
2SD858B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD857 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB762 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

5.9. 2sd850.pdf Size:150K _inchange_semiconductor

2SD858B
2SD858B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER COND

5.10. 2sd859.pdf Size:269K _inchange_semiconductor

2SD858B
2SD858B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD859 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Vo

5.11. 2sd855.pdf Size:265K _inchange_semiconductor

2SD858B
2SD858B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD855 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB760 APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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