2SD859B
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD859B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 35
W
Tensión colector-base (Vcb): 450
V
Tensión colector-emisor (Vce): 350
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.75
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SD859B
2SD859B
Datasheet (PDF)
8.1. Size:212K inchange semiconductor
2sd859.pdf 
isc Silicon NPN Power Transistor 2SD859DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
9.6. Size:189K wingshing
2sd850.pdf
Silicon Diffused Power Transistor2SD850GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package primarily for use in horizontal deflection circuites of colour television receiversTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCollector-emitter voltage (open base)
9.7. Size:150K inchange semiconductor
2sd850.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
9.8. Size:212K inchange semiconductor
2sd855.pdf
isc Silicon NPN Power Transistor 2SD855DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB760Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
9.9. Size:208K inchange semiconductor
2sd857.pdf
isc Silicon NPN Power Transistor 2SD857DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB762Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
9.10. Size:213K inchange semiconductor
2sd856.pdf
isc Silicon NPN Power Transistor 2SD856DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.11. Size:217K inchange semiconductor
2sd858.pdf
isc Silicon NPN Power Transistor 2SD858DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Otros transistores... 2SD857
, 2SD857A
, 2SD857B
, 2SD858
, 2SD858A
, 2SD858B
, 2SD859
, 2SD859A
, 13001-A
, 2SD860
, 2SD860A
, 2SD860B
, 2SD861
, 2SD861A
, 2SD861B
, 2SD862
, 2SD863
.
