2SD878 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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isc Silicon NPN Power Transistor 2SD878DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.DC-DC converter applications.Regulator ap

Ordering number:EN550FNPN Epitaxial Planar Silicon Transistor2SD8791.5V, 3V Strobe ApplicationsFeatures Package Dimensions In applications where two NiCd batteries are used tounit:mmprovide 2.4V, two 2SD879s are used.2003B The charge time is approximately 1 second faster[2SD879]than that of germanium transistors.5.04.04.0 Less power dissipation because of

MCC2SD874A-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SD874A-RMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SD874A-SFax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Power amplifier applicationsNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering

MCC2SD874-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SD874-RMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SD874-SFax: (818) 701-4939Features Power amplifier applicationsNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Power Transistors Epoxy meets UL 94 V-0 flamma

Transistor2SD874, 2SD874ASilicon NPN epitaxial planer typeFor low-frequency power amplificationComplementary to 2SB766 and 2SB766AUnit: mmFeatures Large collector power dissipation PC.1.5 0.14.5 0.1 Low collector to emitter saturation voltage VCE(sat). 1.6 0.2 Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape pack

Transistor2SD875Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB7671.5 0.14.5 0.11.6 0.2FeaturesLarge collector power dissipation PC.High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.08

Transistor2SD875Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB7671.5 0.14.5 0.11.6 0.2FeaturesLarge collector power dissipation PC.High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.08

Transistor2SD874, 2SD874ASilicon NPN epitaxial planer typeFor low-frequency power amplificationComplementary to 2SB766 and 2SB766AUnit: mmFeatures Large collector power dissipation PC.1.5 0.14.5 0.1 Low collector to emitter saturation voltage VCE(sat). 1.6 0.2 Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape pack

UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of

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2SD874A 1A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 4 Complementary to 2SB766A 123B C AE ECLASSIFICATION OF hFE (1) CProduct-Rank 2SD874A-Q

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SD879 TRANSISTOR (NPN)TO-92 FEATURES1. EMITTER In Applications Where Two NiCd Batteries are Used to rovide2.4V, two 2SD879s are used.2. COLLECTOR The charge time is appro ximately 1 s econd faster Than that of germanium transistors.3. BASE Less power dissip ation because o f low Col

2SD874A TRANSISTOR (NPN)FEATURES SOT-89 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 1. BASE Complementary to 2SB766A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units2 VCBO Collector-Base Voltage 60 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Vol

2SD874 TRANSISTOR (NPN)SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation 1. BASE Mini Power Type Package 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector

2SD879(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors. Less power dissipation because of low Collector-to-Emitter Voltage VCE(sat), permitting more flashes of lig

2SD874A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MINLarge collector power dissipation PC 0.530.400.480.442x)0.13 B Low collector-emitter saturation voltage VCE(sat) 0.35 0.371.53.0 Complementary to 2SB766A Dimensions in inches and (millimeters)MAXIMUM

FM120-M WILLAS2SD874THRUSOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesTRANSISTOR (NPN) Batch process design, excellent power dissipation offersSOT-89 better reverse leakage current and thermal resistance.SOD-123HFEAow profile surface mounted appl

ST 2SD874U NPN Silicon Epitaxial Planar Transistor for low frequency power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICP 1.5 ACollector Power Dissipation PC 1 WJunction Temperature T

SMD Type TransistorsNPN Transistors2SD874A Features1.70 0.1 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Complimentary to 2SB766A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

SMD Type TransistorsNPN Transistors2SD875 Features 1.70 0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Complimentary to 2SB7670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter

SMD Type TransistorsNPN Transistors2SD8741.70 0.1 Features Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation Mini Power Type Package0.42 0.10.46 0.1 Complimentary to 2SB7661.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter

2SD874ASOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES SOT-89 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 1. BASE Complementary to 2SB766A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit3. EMITTER VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 4

isc Silicon NPN Power Transistor 2SD873DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.DC-DC converter applications.Regulator a

isc Silicon NPN Power Transistor 2SD871DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD870DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output ap