2SD878 - Даташиты. Аналоги. Основные параметры

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isc Silicon NPN Power Transistor 2SD878 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. DC-DC converter applications. Regulator ap

Ordering number EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Features Package Dimensions In applications where two NiCd batteries are used to unit mm provide 2.4V, two 2SD879s are used. 2003B The charge time is approximately 1 second faster [2SD879] than that of germanium transistors. 5.0 4.0 4.0 Less power dissipation because of

MCC 2SD874A-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SD874A-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SD874A-S Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering

MCC 2SD874-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SD874-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SD874-S Fax (818) 701-4939 Features Power amplifier applications NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Power Transistors Epoxy meets UL 94 V-0 flamma

Transistor 2SD874, 2SD874A Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB766 and 2SB766A Unit mm Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 Low collector to emitter saturation voltage VCE(sat). 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape pack

Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB767 1.5 0.1 4.5 0.1 1.6 0.2 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08

Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB767 1.5 0.1 4.5 0.1 1.6 0.2 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.4 0.08

Transistor 2SD874, 2SD874A Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB766 and 2SB766A Unit mm Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 Low collector to emitter saturation voltage VCE(sat). 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape pack

UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of

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2SD874A 1A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 4 Complementary to 2SB766A 1 2 3 B C A E E CLASSIFICATION OF hFE (1) C Product-Rank 2SD874A-Q

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. 2. COLLECTOR The charge time is appro ximately 1 s econd faster Than that of germanium transistors. 3. BASE Less power dissip ation because o f low Col

2SD874A TRANSISTOR (NPN) FEATURES SOT-89 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 1. BASE Complementary to 2SB766A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 60 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Vol

2SD874 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation 1. BASE Mini Power Type Package 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector

2SD879(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors. Less power dissipation because of low Collector-to-Emitter Voltage VCE(sat), permitting more flashes of lig

2SD874A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 4.6 1 B 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Large collector power dissipation PC 0.53 0.40 0.48 0.44 2x) 0.13 B Low collector-emitter saturation voltage VCE(sat) 0.35 0.37 1.5 3.0 Complementary to 2SB766A Dimensions in inches and (millimeters) MAXIMUM

FM120-M WILLAS 2SD874THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features TRANSISTOR (NPN) Batch process design, excellent power dissipation offers SOT-89 better reverse leakage current and thermal resistance. SOD-123H FEAow profile surface mounted appl

ST 2SD874U NPN Silicon Epitaxial Planar Transistor for low frequency power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 1.5 A Collector Power Dissipation PC 1 W Junction Temperature T

SMD Type Transistors NPN Transistors 2SD874A Features 1.70 0.1 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Complimentary to 2SB766A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

SMD Type Transistors NPN Transistors 2SD875 Features 1.70 0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Complimentary to 2SB767 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter

SMD Type Transistors NPN Transistors 2SD874 1.70 0.1 Features Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation Mini Power Type Package 0.42 0.1 0.46 0.1 Complimentary to 2SB766 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter

2SD874A SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES SOT-89 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 1. BASE Complementary to 2SB766A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 3. EMITTER VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 4

isc Silicon NPN Power Transistor 2SD873 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. DC-DC converter applications. Regulator a

isc Silicon NPN Power Transistor 2SD871 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MA

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD870 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 4A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output ap