2SD959 Datasheet. Equivalente

 ..1. Size:214K  inchange semiconductor
 2sd959.pdf

isc Silicon NPN Power Transistor 2SD959 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = 0.5V(Max)@I = 2A CE(sat) C Complement to Type 2SB867 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSO

 9.1. Size:37K  panasonic
 2sd958.pdf

Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Unit mm Complementary to 2SB788 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5

 9.2. Size:41K  panasonic
 2sd958 e.pdf

Transistor 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Unit mm Complementary to 2SB788 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5

 9.3. Size:229K  panasonic
 2sd950.pdf

 9.4. Size:233K  panasonic
 2sd951.pdf

 9.5. Size:206K  inchange semiconductor
 2sd953.pdf

isc Silicon NPN Power Transistor 2SD953 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 4.5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM

 9.6. Size:205K  inchange semiconductor
 2sd950.pdf

isc Silicon NPN Power Transistor 2SD950 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 2A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM R

 9.7. Size:205K  inchange semiconductor
 2sd951.pdf

isc Silicon NPN Power Transistor 2SD951 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM

 9.8. Size:198K  inchange semiconductor
 2sd956.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD956 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 4.0V(Max.)@ I = 2A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applicati

 9.9. Size:198K  inchange semiconductor
 2sd957.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD957 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 4.5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applica