All Transistors. 2SD959 Datasheet

 

2SD959 Datasheet and Replacement


   Type Designator: 2SD959
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220
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2SD959 Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
 2sd959.pdf pdf_icon

2SD959

isc Silicon NPN Power Transistor 2SD959DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.5V(Max)@I = 2ACE(sat) CComplement to Type 2SB867Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSO

 9.1. Size:37K  panasonic
 2sd958.pdf pdf_icon

2SD959

Transistor2SD958Silicon NPN epitaxial planer typeFor high breakdown voltage and low-noise amplificationUnit: mmComplementary to 2SB7886.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

 9.2. Size:41K  panasonic
 2sd958 e.pdf pdf_icon

2SD959

Transistor2SD958Silicon NPN epitaxial planer typeFor high breakdown voltage and low-noise amplificationUnit: mmComplementary to 2SB7886.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

 9.3. Size:206K  inchange semiconductor
 2sd953.pdf pdf_icon

2SD959

isc Silicon NPN Power Transistor 2SD953DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | 2SA901

Keywords - 2SD959 transistor datasheet

 2SD959 cross reference
 2SD959 equivalent finder
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