2SD985O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD985O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 7000
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SD985O
2SD985O Datasheet (PDF)
2sd985.pdf
isc Silicon NPN Darlington Power Transistor 2SD985DESCRIPTIONCollectorEmitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 2000(Min) @ I = 1AFE CLow Collector Saturation VoltageComplement to Type 2SB794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThey are suitable for use to operate from IC
2sd985 2sd986.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
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