2SD986O Todos los transistores

 

2SD986O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD986O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 7000
   Paquete / Cubierta: TO126
     - Selección de transistores por parámetros

 

2SD986O Datasheet (PDF)

 8.1. Size:152K  nec
2sd985 2sd986.pdf pdf_icon

2SD986O

 8.2. Size:212K  inchange semiconductor
2sd986.pdf pdf_icon

2SD986O

isc Silicon NPN Darlington Power Transistor 2SD986DESCRIPTIONCollectorEmitter Breakdown Voltage-: V = 80V(Min.)(BR)CEODC Current Gain-: h = 2000(Min) @ I = 1AFE CLow Collector Saturation VoltageComplement to Type 2SB795Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThey are suitable for use to operate from IC

 8.3. Size:124K  inchange semiconductor
2sd985 2sd986.pdf pdf_icon

2SD986O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2N1207 | BSP19AT1 | DTA123EET1G | DTA124EET1G | K2121B | BUX85G | DMG26301

 

 
Back to Top

 


 
.