2SD991K
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD991K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 300
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta:
TO220
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2SD991K
Datasheet (PDF)
9.6. Size:337K htsemi
2sd999.pdf 
2SD999 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Mini Power Type Package 2. COLLECTOR Excellent DC Current Gain Linearity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collec
9.7. Size:122K tysemi
2sd992-z.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SD992-ZTO-252Unit: mm+0.15 +0.1Features6.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Coll
9.8. Size:1169K kexin
2sd999.pdf
SMD Type TransistorsNPN Transistors2SD999SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
9.9. Size:548K cn sptech
2sd998.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD998DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
9.10. Size:205K inchange semiconductor
2sd993.pdf
isc Silicon NPN Power Transistor 2SD993DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 10V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =
9.11. Size:210K inchange semiconductor
2sd998.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD998DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput st
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