Справочник транзисторов. 2SD991K

 

Биполярный транзистор 2SD991K - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD991K
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 500
   Корпус транзистора: TO220

 Аналоги (замена) для 2SD991K

 

 

2SD991K Datasheet (PDF)

 9.1. Size:48K  sanyo
2sd995.pdf

2SD991K

 9.2. Size:46K  sanyo
2sd993.pdf

2SD991K

 9.3. Size:222K  nec
2sd999.pdf

2SD991K
2SD991K

 9.4. Size:177K  nec
2sd992.pdf

2SD991K
2SD991K

 9.5. Size:31K  no
2sd999.pdf

2SD991K

 9.6. Size:337K  htsemi
2sd999.pdf

2SD991K

2SD999 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Mini Power Type Package 2. COLLECTOR Excellent DC Current Gain Linearity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collec

 9.7. Size:122K  tysemi
2sd992-z.pdf

2SD991K

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SD992-ZTO-252Unit: mm+0.15 +0.1Features6.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Coll

 9.8. Size:1169K  kexin
2sd999.pdf

2SD991K
2SD991K

SMD Type TransistorsNPN Transistors2SD999SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

 9.9. Size:548K  cn sptech
2sd998.pdf

2SD991K
2SD991K

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD998DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.10. Size:205K  inchange semiconductor
2sd993.pdf

2SD991K
2SD991K

isc Silicon NPN Power Transistor 2SD993DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 10V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =

 9.11. Size:210K  inchange semiconductor
2sd998.pdf

2SD991K
2SD991K

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD998DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput st

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top