2N2501 Todos los transistores

 

2N2501 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2501

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 350 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hfe): 50

Paquete / Caja (carcasa): TO18

Búsqueda de reemplazo de transistor bipolar 2N2501

 

2N2501 Datasheet (PDF)

9.1. 2n2509.pdf Size:100K _njs

2N2501

9.2. ixgt2n250.pdf Size:175K _ixys

2N2501 2N2501

Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2

 9.3. ixbh2n250.pdf Size:180K _ixys

2N2501 2N2501

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

9.4. ixgh2n250.pdf Size:175K _ixys

2N2501 2N2501

Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2

 9.5. ixth02n250 ixtv02n250s.pdf Size:194K _ixys

2N2501 2N2501

High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient

9.6. ixbt2n250.pdf Size:180K _ixys

2N2501 2N2501

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

9.7. ixbh42n250.pdf Size:206K _ixys

2N2501 2N2501

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35

9.8. ixta02n250hv.pdf Size:184K _ixys

2N2501 2N2501

Advance Technical InformationHigh VoltageIXTA02N250HVVDSS = 2500VPower MOSFETID25 = 200mA RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263ABGS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 2500 VS = Source Tab = DrainVGSS

Otros transistores... 2N2491 , 2N2492 , 2N2493 , 2N2494 , 2N2495 , 2N2496 , 2N25 , 2N250 , KS8550L-D , 2N2509 , 2N250A , 2N251 , 2N2510 , 2N2511 , 2N2512 , 2N2514 , 2N2515 .

 

 
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