9011 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC

SS9011AM Converter, AM/FM IF AmplifierGeneral Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 30 mAPC Collector Power Dissipatio

SS9011 NPN EPITAXIAL SILICON TRANSISTORAM CONVERTER,AM/FM IF AMPLIFIERTO-92GENERAL PURPOSE TRANSISTORABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 30VEmitter-Base Voltage VEBO 5Collector Current IC 30mwCollector Dissipation PC 400Junction Temperature TJ 150Storage Temperature T

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CD9011TO-92CBEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 30 VCollector -Base Voltage VCBO 50 VEmitter Base Voltage VEBO 5.0 VCollector Current IC 100 mAPower Dissipation PD 400 mWOperating And Storage Junction Tj

SEMICONDUCTOR KTC9011STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. EL B LFEATUREDIM MILLIMETERSHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz._A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CH

SEMICONDUCTOR KTC9011TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B CFEATUREHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 V H 0

9011M(BR3DG9011M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P CHigh PC. / Applications AM ,AM/FM AM converter, AM/FM IF amplifier and general amplifier. / Equivalent Circuit

BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9011 FEATURES Pb Collector Current.(IC= 30mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, AM/FM if amplifier general purpose transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9011 1T SOT-23 MAXIMUM RATING @ Ta=25 unless otherwis