9011 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC

SS9011 AM Converter, AM/FM IF Amplifier General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 30 mA PC Collector Power Dissipatio

SS9011 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER,AM/FM IF AMPLIFIER TO-92 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 Collector Current IC 30 mw Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature T

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9011 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Power Dissipation PD 400 mW Operating And Storage Junction Tj

SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS High Power Gain Gpe=29dB(Typ.) at f=10.7MHz. _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CH

SEMICONDUCTOR KTC9011 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain Gpe=29dB(Typ.) at f=10.7MHz. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0

BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9011 FEATURES Pb Collector Current.(IC= 30mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, AM/FM if amplifier general purpose transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9011 1T SOT-23 MAXIMUM RATING @ Ta=25 unless otherwis