9011
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 9011
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.31
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 18
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 135
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 3.5
pF
Ganancia de corriente contínua (hfe): 28
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 9011
9011
Datasheet (PDF)
0.2. Size:267K motorola
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC
0.3. Size:38K fairchild semi
ss9011.pdf
SS9011AM Converter, AM/FM IF AmplifierGeneral Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 30 mAPC Collector Power Dissipatio
0.4. Size:50K samsung
ss9011.pdf
SS9011 NPN EPITAXIAL SILICON TRANSISTORAM CONVERTER,AM/FM IF AMPLIFIERTO-92GENERAL PURPOSE TRANSISTORABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 30VEmitter-Base Voltage VEBO 5Collector Current IC 30mwCollector Dissipation PC 400Junction Temperature TJ 150Storage Temperature T
0.5. Size:169K cdil
cd9011.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR CD9011TO-92CBEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 30 VCollector -Base Voltage VCBO 50 VEmitter Base Voltage VEBO 5.0 VCollector Current IC 100 mAPower Dissipation PD 400 mWOperating And Storage Junction Tj
0.6. Size:400K kec
ktc9011s.pdf
SEMICONDUCTOR KTC9011STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. EL B LFEATUREDIM MILLIMETERSHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz._A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CH
0.7. Size:26K kec
ktc9011.pdf
SEMICONDUCTOR KTC9011TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B CFEATUREHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 V H 0
0.8. Size:769K blue-rocket-elect
9011m.pdf
9011M(BR3DG9011M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features P CHigh PC. / Applications AM ,AM/FM AM converter, AM/FM IF amplifier and general amplifier. / Equivalent Circuit
0.9. Size:121K galaxy
s9011.pdf
BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9011 FEATURES Pb Collector Current.(IC= 30mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, AM/FM if amplifier general purpose transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9011 1T SOT-23 MAXIMUM RATING @ Ta=25 unless otherwis
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