A157 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A157 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hFE): 125
Encapsulados: TO18
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A157 datasheet
2pa1576.pdf
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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2sa1579fra.pdf
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2sa1576u3hzg.pdf
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2sa1579.pdf
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2sa1576a-s.pdf
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2sa1577-p.pdf
MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1577-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion Untral Small Surface Mount Package Gn
2sa1577-q.pdf
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2sa1576a-q.pdf
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2sa1577-r.pdf
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2sa1576a-r.pdf
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2sa1576art1-d.pdf
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2sa1576a.pdf
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2sa1579.pdf
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2sa1576a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1576A TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -5
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kra157f-kra159f.pdf
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kta1571s.pdf
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2sa1579.pdf
2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC
2sa1577.pdf
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2sa1576a.pdf
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2sa1579.pdf
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2sa1576a.pdf
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2sa1576axt1.pdf
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bta1576s3.pdf
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bta1579s3.pdf
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l2sa1576aqt1g.pdf
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l2sa1576aqt1g l2sa1576art1g l2sa1576ast1g.pdf
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l2sa1577qt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q
l2sa1576art1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA157
l2sa1577pt1g.pdf
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l2sa1576ast1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576
l2sa1577rt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1577QT1G Series F We declare that the material of product compliance with RoHS requirements. S-L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q
fta1576.pdf
SEMICONDUCTOR FTA1576 TECHNICAL DATA General Purpose Transistors PNP Silicon ORDERING INFORMATION 3 Shipping Device Package FTA1576AXLT1G SC-70 / SOT-323 3000/Tape & Reel 1 FTA1576AXLT3G SC-70 / SOT-323 10000/Tape & Reel 2 * X hFE Cassified SC-70 / SOT 323 MAXIMUM RATINGS 3 Rating Symbo Value Unit COLLECTOR Collector Emitter Voltage VCEO 50 V 1 Collector Base V
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SMD Type Transistors PNP Transistors 2SA1577 Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector
2sa1576a.pdf
SMD Type Transistors PNP Transistors 2SA1576A Features Excellent hFE linearity Complements the 2SC4081 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -150 mA Collector Power
2sa1575.pdf
SMD Type Transistors PNP Transistors 2SA1575 1.70 0.1 Features High fT. High breakdown voltage. Small reverse transfer capacitance and excellent 0.42 0.1 0.46 0.1 high-frequency characteristic. Complementary to 2SC4080 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200
2pa1576.pdf
SMD Type IC SMD Type Transistors PNP General Purpose Transistor 2PA1576 Features Low current (max. 100 mA) Low voltage (max. 40 V). Low collector capacitance (typ. 2.5 pF). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector curre
2sa1579.pdf
SMD Type Transistors PNP Transistors 2SA1579 Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA
2sa1577gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SA1577GP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=7.0pF(Typ.) CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capabili
2sc1573-a 3da1573-a.pdf
2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier and video frequency output in small screen TV. ,f , 2SA879(3CA879) T Features High V , high f ; Complementary pair with 2SA879(3CA879). CEO T /Absolute maximum rati
2sa1576ar-q 2sa1576ar-r 2sa1576ar-s.pdf
2SA1576AR PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junctio
mmbtsa1576w.pdf
PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperatur
Otros transistores... 92PU45, 92PU45A, 92PU51, 92PU51A, 92PU55, 92PU56, 92PU57, 9400, 13007, A157A, A157B, A158, A158A, A158B, A158C, A159, A159B
History: 2SC3779
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