A157 - Даташиты. Аналоги. Основные параметры

2PA1576 PNP general-purpose transistor Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT323 (SC-70) plastic package. The NPN complement is 2PC4081. 1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V) Low collector capacitance (typ. 2.5 pF) 1.3 Applications General-purpose switching and amplification 2. P

Ordering number EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features Package Dimensions High fT. unit mm High breakdown voltage. 2038 Small reverse transfer capacitance and excellent [2SA1575/2SC4080] high-frequency characteristic. Adoption of FBET process. E Emitter C Collector

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

General purpose small signal amplifier (50V, 0.15A) 2SA1576UB Applications Dimensions (Unit mm) General purpose small signal amplifier. UMT3F 2.0 0.9 0.32 Features (3) 1) Excellent hFE linearity. 2) Complements the 2SC4081UB. (1) (2) 0.65 0.65 0.13 1.3 Structure PNP silicon epitaxial planar transistor. Each lead has same dimensions (1) Base (2) Emit

2SA1577 Datasheet Medium Power Transistor (-32V, -500mA) lOutline l Parameter Value UMT3 VCEO -32V IC -500mA SOT-323 SC-70 lFeatures l 1)Large IC. lInner circuit l ICMAX=-500mA 2)Low VCE(sat). Ideal for low-voltage operation. 3)Complements the 2SC4097. lApplication l GENERAL PURPOSE SMALL SIGNAL AM

AEC-Q101 Qualified Medium Power Transistor (-32V, -05A) 2SA1577FRA Features Dimensions (Unit mm) 1) Large IC. 2SA1577FRA 2SA1577 ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 2.0 0.2 3) Complements the 2SC4097. 2SC4097FRA 1.3 0.1 0.9 0.1 0.65 0.65 0.7 0.1 0.2 (1) (2) Structure 0 0.1 Epitaxial planer type (3) PNP silicon transistor

2SA1576A FRA Datasheet (-50V, -150mA) AEC-Q101 l l SOT-323 SC-70 VCEO -50V IC -150mA UMT3 l l l l 1)hFE 2)2SC4081 FRA l l

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_

2SA1579 FRA Datasheet High-voltage Amplifier Transistor (-120V, -50mA) AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO -120V IC -50mA UMT3 lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=-120V) 2)Complements the 2SC4102 FRA. lApplication l HIGH VOLTAGE AMPLIFIER lPackaging specifications l Basic

General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet General Purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1) General Purpose. 2) Complementary 2SC5658/2SC4617EB 2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maxim

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -120 V Collec

2SA1576U3 HZG Datasheet General Purpose Transistor (-50V, -150mA) AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO -50V IC -150mA UMT3 lFeatures lInner circuit l l 1)Excellent hFE linearity. 2)Complements the 2SC4081U3 HZG. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lPackaging specifications l Package

High-voltage Amplifier Transistor ( 120V, 50mA) 2SA1579 / 2SA1514K Features Dimensions (Units mm) 1) High breakdown voltage. (BVCEO = 120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K Absolute maximum ratings (Ta=25 C) 1.25 Parameter Symbol Limits Unit 2.1 Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V 0.1Min. Emitter-base volt

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1577-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1577-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC 2SA1577-P Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1577-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1577-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Ideally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-Q MCC Micro Commercial Components TM 2SA1576A-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1576A-S Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Excellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount http //onsemi.com Features Moisture Sensitivity Level 1 Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc 1 2 Emitter-Base Voltage V(BR)EBO 7.0 Vdc BASE EMITTER Collector Current

2SA1577 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Complements of the 2SC4097 Large IC, MAX=-500mA A L Low VCE(sat). Ideal for low-voltage operation. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 Product-Rank 2SA1577-P 2SA1577-Q 2SA1577

2SA1576A -0.15A, -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-323 The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. A L 3 3 FEATURES Top View C B 1 Complements of the 2SC4081 1 2 Excellent hFE Linear

2SA1579 -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 A L 3 3 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank 2SA1579-R 2SA1579-S D Range 180 390

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1576A TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -5

SEMICONDUCTOR KTA1572 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability IC and ICP. B D Higher Efficiency Leading to Less Heat Generation. DIM MILLIMETERS A 7.20 MAX B 5.20 MAX C 0.60 MAX P D 2.50 MAX MAXIMUM RATING (Ta=25 ) DEPTH 0.2 E 1.15 MAX F 1.27 C CHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR KRA157F KRA159F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _

SEMICONDUCTOR KRA157F KRA159F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0

SEMICONDUCTOR KTA1571S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability IC and ICP. Higher Efficiency Leading to Less Heat Generation. E L B L DIM MILLIMETERS _ + A 2.93 0.20 MAXIMUM RATING (Ta=25 ) B 1.30+0.20/-0.15 C 1.30 MAX CHARACTERISTIC SYMBOL RATING UNIT 2 3 D 0.40+0.15/-0

2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC

2SA1577 SOT-323 Transistor(PNP) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1576A SOT-323 Transistor(PNP) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Curre

2SA1579 SOT-323 Transistor(PNP) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I

2SA1576A PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-323 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -60 V Collector-Emitter Voltage VCEO -50 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current - Continuous -150 mA Total Device Dissipation PD 200 mW T =25 C A Tj C Junction Temperature +150 Tstg Storage Temperatu

2SA1576AxT1 SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter RoHS product for packing code suffix "G" Value Unit Halogen free product for packing code suffix "H" VCBO Collector-Base V

Spec. No. C306S3 Issued Date 2002.05.11 Revised Date 2014.01.24 CYStech Electronics Corp. Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating

Spec. No. C307S3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2011.09.20 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576A

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA157

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA157

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G Series F S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Shipping Device Package L2SA1576

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1577QT1G Series F We declare that the material of product compliance with RoHS requirements. S-L2SA1577QT1G Series FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. F ORDERING INFORMATION 3 Shipping Device Package L2SA1577Q

SEMICONDUCTOR FTA1576 TECHNICAL DATA General Purpose Transistors PNP Silicon ORDERING INFORMATION 3 Shipping Device Package FTA1576AXLT1G SC-70 / SOT-323 3000/Tape & Reel 1 FTA1576AXLT3G SC-70 / SOT-323 10000/Tape & Reel 2 * X hFE Cassified SC-70 / SOT 323 MAXIMUM RATINGS 3 Rating Symbo Value Unit COLLECTOR Collector Emitter Voltage VCEO 50 V 1 Collector Base V

SMD Type Transistors PNP Transistors 2SA1577 Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector

SMD Type Transistors PNP Transistors 2SA1576A Features Excellent hFE linearity Complements the 2SC4081 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -150 mA Collector Power

SMD Type Transistors PNP Transistors 2SA1575 1.70 0.1 Features High fT. High breakdown voltage. Small reverse transfer capacitance and excellent 0.42 0.1 0.46 0.1 high-frequency characteristic. Complementary to 2SC4080 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200

SMD Type IC SMD Type Transistors PNP General Purpose Transistor 2PA1576 Features Low current (max. 100 mA) Low voltage (max. 40 V). Low collector capacitance (typ. 2.5 pF). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector curre

SMD Type Transistors PNP Transistors 2SA1579 Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA

CHENMKO ENTERPRISE CO.,LTD 2SA1577GP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=7.0pF(Typ.) CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capabili

2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier and video frequency output in small screen TV. ,f , 2SA879(3CA879) T Features High V , high f ; Complementary pair with 2SA879(3CA879). CEO T /Absolute maximum rati

2SA1576AR PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junctio

PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperatur