2PA1576PNP general-purpose transistorRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP transistor in a SOT323 (SC-70) plastic package. The NPN complement is 2PC4081.1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V) Low collector capacitance (typ. 2.5 pF)1.3 Applications General-purpose switching and amplification2. P

Ordering number:EN3171PNP/NPN Epitaxial Planar Silicon Transistors2SA1575/2SC4080High-Frequency Amplifier,Wide-Band Amplifier ApplicationsFeatures Package Dimensions High fT.unit:mm High breakdown voltage.2038 Small reverse transfer capacitance and excellent[2SA1575/2SC4080]high-frequency characteristic. Adoption of FBET process.E : EmitterC : Collector

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

General purpose small signal amplifier (50V, 0.15A) 2SA1576UB Applications Dimensions (Unit : mm) General purpose small signal amplifier. UMT3F2.00.90.32Features (3)1) Excellent hFE linearity. 2) Complements the 2SC4081UB. (1) (2) 0.65 0.65 0.131.3Structure PNP silicon epitaxial planar transistor. Each lead has same dimensions(1) Base(2) Emit

2SA1577DatasheetMedium Power Transistor (-32V, -500mA)lOutlinelParameter Value UMT3VCEO-32VIC-500mASOT-323SC-70 lFeaturesl1)Large IC.lInner circuitl ICMAX=-500mA2)Low VCE(sat). Ideal for low-voltage operation.3)Complements the 2SC4097.lApplicationlGENERAL PURPOSE SMALL SIGNAL AM

AEC-Q101 QualifiedMedium Power Transistor (-32V, -05A) 2SA1577FRAFeatures Dimensions (Unit : mm)1) Large IC.2SA1577FRA2SA1577ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 2.00.23) Complements the 2SC4097. 2SC4097FRA1.30.1 0.90.10.65 0.65 0.70.10.2(1) (2)Structure 00.1Epitaxial planer type (3)PNP silicon transistor

2SA1576A FRADatasheet (-50V, -150mA)AEC-Q101 ll SOT-323 SC-70 VCEO-50VIC-150mAUMT3l ll l1)hFE2)2SC4081 FRAll

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_

2SA1579 FRADatasheetHigh-voltage Amplifier Transistor (-120V, -50mA)AEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO-120VIC-50mAUMT3lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=-120V)2)Complements the 2SC4102 FRA.lApplicationlHIGH VOLTAGE AMPLIFIERlPackaging specificationslBasic

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

TransistorsMedium Power Transistor(*32V, *0.5A)2SA1036K / 2SA1577 / 2SA854SFFeatures FExternal dimensions (Units: mm)1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltageoperation.3) Complements the 2SC2411K /2SC1741S / 2SC4097.FStructureEpitaxial planar typePNP silicon transistor(96-86-B11)204Transistors 2SA1036K / 2SA1577 / 2SA854SFAbsolute maxim

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA1579 / 2SA1514K / 2SA1038STransistorsHigh-voltage Amplifier Transistor(-120V, -50mA)2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO = -120V)2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S.1.252.1 Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -120 VCollec

2SA1576U3 HZGDatasheetGeneral Purpose Transistor (-50V, -150mA)AEC-Q101 QualifiedlOutlinel SOT-323 Parameter Value SC-70 VCEO-50VIC-150mAUMT3lFeatures lInner circuitl l1)Excellent hFE linearity.2)Complements the 2SC4081U3 HZG.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIERlPackaging specificationslPackage

High-voltage Amplifier Transistor (120V, 50mA) 2SA1579 / 2SA1514K Features Dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SA15792) Complements the 2SC4102 / 2SC3906K Absolute maximum ratings (Ta=25C) 1.25Parameter Symbol Limits Unit2.1Collector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 V0.1Min.Emitter-base volt

2SA1576A-QMCCMicro Commercial ComponentsTM2SA1576A-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1576A-SPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP SiliconExcellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC2SA1577-PMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1577-QMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SA1577-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNPIdeally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

MCC2SA1577-PMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1577-QMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SA1577-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNPIdeally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-QMCCMicro Commercial ComponentsTM2SA1576A-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1576A-SPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP SiliconExcellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

MCC2SA1577-PMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1577-QMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SA1577-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNPIdeally Suited for Automatic Insertion Untral Small Surface Mount Package Gn

2SA1576A-QMCCMicro Commercial ComponentsTM2SA1576A-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1576A-SPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP SiliconExcellent hFE Linearity Epitaxial Transistors Complementary to 2SC408

2SA1576ART1General PurposeAmplifier TransistorsPNP Surface Mounthttp://onsemi.comFeatures Moisture Sensitivity Level: 1 Pb-Free Package is AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 VdcCollector-Emitter Voltage V(BR)CEO 50 Vdc1 2Emitter-Base Voltage V(BR)EBO 7.0 Vdc BASE EMITTERCollector Current

2SA1577 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Complements of the 2SC4097 Large IC, MAX=-500mA AL Low VCE(sat). Ideal for low-voltage operation. 33Top View C BCLASSIFICATION OF hFE 11 22Product-Rank 2SA1577-P 2SA1577-Q 2SA1577

2SA1576A -0.15A, -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-323 The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. AL33FEATURES Top View C B1 Complements of the 2SC4081 1 2 Excellent hFE Linear

2SA1579 -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 AL33Top View C B11 2CLASSIFICATION OF hFE 2K EProduct-Rank 2SA1579-R 2SA1579-S DRange 180~390

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1576A TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Excellent hFE linearity 3. COLLECTOR Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -5

SEMICONDUCTOR KTA1572TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.B DHigher Efficiency Leading to Less Heat Generation.DIM MILLIMETERSA 7.20 MAXB 5.20 MAXC 0.60 MAXPD 2.50 MAXMAXIMUM RATING (Ta=25 ) DEPTH:0.2E 1.15 MAXF 1.27CCHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR KRA157F~KRA159FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041_

SEMICONDUCTOR KRA157F~KRA159FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.0

SEMICONDUCTOR KTA1571STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.Higher Efficiency Leading to Less Heat Generation.EL B LDIM MILLIMETERS_+A 2.93 0.20MAXIMUM RATING (Ta=25)B 1.30+0.20/-0.15C 1.30 MAXCHARACTERISTIC SYMBOL RATING UNIT 23 D 0.40+0.15/-0

2SA1 57 9TRANSISTOR(PNP)SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC

2SA1577 SOT-323 Transistor(PNP)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO

2SA1576A SOT-323 Transistor(PNP)1. BASE SOT-3232. EMITTER 3. COLLECTOR Features Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -6 V IC Collector Curre

2SA1579 SOT-323 Transistor(PNP)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V I

2SA1576APNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-323MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -60 VCollector-Emitter VoltageVCEO-50 VVEBOEmitter-Base Voltage -6.0 VICCollector Current - Continuous -150 mATotal Device DissipationPD200 mWT =25CATj CJunction Temperature +150TstgStorage Temperatu

2SA1576AxT1 SOT-323 Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter RoHS product for packing code suffix "G" Value Unit Halogen free product for packing code suffix "H" VCBO Collector-Base V

Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2014.01.24 CYStech Electronics Corp. Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating

Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2011.09.20 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O

2SA1577W(BR3CG1577W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features 2SC1741SBR3DG1741SWLarge Ic low Vce(sat),complementary pair with the 2SC1741S(BR3DG1741SW). / Applications

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576A

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements.L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G SeriesF S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL2SA1577QT1G SeriesF We declare that the material of product compliance with RoHS requirements.S-L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q

SEMICONDUCTORFTA1576TECHNICAL DATAGeneral Purpose TransistorsPNP SiliconORDERING INFORMATION3ShippingDevice PackageFTA1576AXLT1G SC-70 / SOT-323 3000/Tape & Reel1FTA1576AXLT3G SC-70 / SOT-323 10000/Tape & Reel2* X : hFE CassifiedSC-70 / SOT 323 MAXIMUM RATINGS3Rating Symbo Value UnitCOLLECTORCollectorEmitter Voltage VCEO 50 V1CollectorBase V

SMD Type TransistorsPNP Transistors2SA1577 Features Large IC. CMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector

SMD Type TransistorsPNP Transistors2SA1576A Features Excellent hFE linearity Complements the 2SC40811.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -150 mA Collector Power

SMD Type TransistorsPNP Transistors2SA15751.70 0.1 Features High fT. High breakdown voltage. Small reverse transfer capacitance and excellent0.42 0.10.46 0.1 high-frequency characteristic. Complementary to 2SC40801.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200

SMD Type ICSMD Type TransistorsPNP General Purpose Transistor2PA1576FeaturesLow current (max. 100 mA)Low voltage (max. 40 V).Low collector capacitance (typ. 2.5 pF).1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -40 VEmitter-base voltage VEBO -5 VCollector curre

SMD Type TransistorsPNP Transistors2SA1579 Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA

CHENMKO ENTERPRISE CO.,LTD2SA1577GPSURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage V* Low cob. Cob=7.0pF(Typ.)CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capabili

2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier and video frequency output in small screen TV. :,f , 2SA879(3CA879) TFeatures: High V , high f ; Complementary pair with 2SA879(3CA879). CEO T/Absolute maximum rati

2SA1576ARPNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 150 mAPower Dissipation Ptot 200 mW OJunctio

PNP Silicon Epitaxial Planar TransistorThe transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 150 mAPower Dissipation Ptot 200 mW OJunction Temperatur