A158 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColl

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2

2SA1586Bipolar Transistors Silicon PNP Epitaxial Type2SA15861. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = -50 V(3) High collector current: IC = -150 mA (max)(4) High hFE: hFE = 70 to 400(5) Excellent hFE linearity: hFE

TTA1586FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) TTA1586FU Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 120 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Comple

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollecto

Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585SVCE(sat) = -0.2V (Typ.) 40.2 20.24.5+0.2(IC/IB = -2A / -0.1A) -0.11.50.11.60.12) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15(1) (2) (3)-0.05

TransistorsLow VCE(sat) Transistor (*20V, *3A)2SB1424 / 2SA1585SFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC/IB = *2A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2150 /2SC4115S.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-596-A74)201Transist

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain High Voltage and High Current AL Complementary to 2SC4116 33 Small Package Top View C B11 22K EAPPLICATIONS General Purpose Amplifi

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1585BC(9AW)TO-92BCEMarking : CSA 1585 BCABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 40 VCollector Emitter Voltage BVCEO 20 VEmitter Base Voltage BVEBO 6.0 VCol

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CDA1585BC(9AW)TO-92BCEMarking : CDA 1585 BCABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 20 VCollector Emitter Voltage BVCEO 20 VEmitter Base Voltage BVEBO 6.0 VCol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll

SEMICONDUCTOR KRA157F~KRA159FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041_

2SA1 58 6TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter

A1587 PNP silicon APPLICATION:Audio Frequency General Purpose Amplifier Applications. SOT-323 MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VCollector Current IC -100 mAEmitter Current IB -20 mACollector Power Dissipati

A1585 APPLICATION: Low Frequency Amplifier Applications. PNP silicon MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITSOT-89 Collector-base voltage -20 VVCBO1. BASE Collector-emitter voltage -20 VVCEO1 2. COLLECTOR Emitter-base voltage -6 VVEBO2 Collector current -2 AIC3 3. EMITTER Collector Power Dissip

A1588 APPLICATION:Audio Frequency Low Power Amplifier Applications. PNP silicon Driver Stage Amplifier Applications.MAXIMUM RATINGSTa25 SOT-323 PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -500 mA 1Collector Pow

A1586 PNP silicon APPLICATION:Audio Frequency General Purpose Amplifier Applications.MAXIMUM RATINGSTa25 SOT-323 PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mA 1Collector Power Dissipation PC 100 mW2Junction

A1585S PNP SiliconPNP Transistors APPLICATIONLow Frequency Applications. MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITVCBO -20 VCollector-base voltageVCEO -20 VCollector-emitter voltageVEBO -6 VEmitter-base voltage Ic -2 ACollector currentIcp -5 ACollector current (Pluse)Pc 0.4Collector Power Dissipation W

SMD Type TransistorsPNP Transistors2SA1588 Features Excellent hFE linearity : hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC41181.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector

SMD Type TransistorsPNP Transistors2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec

SMD Type TransistorsPNP Transistors2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC

SMD Type orSMD Type TransistICsPNP Transistors 2SA1580SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh fT.Small reverse transfer capacitance.1 2+0.1+0.050.95 -0.1Adoption of FBET process. 0.1 -0.01+0.11.9 -0.1 Complementary to 2SC41041.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base vo

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica