A158 - Даташиты. Аналоги. Основные параметры

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Coll

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2

2SA1586 Bipolar Transistors Silicon PNP Epitaxial Type 2SA1586 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage VCEO = -50 V (3) High collector current IC = -150 mA (max) (4) High hFE hFE = 70 to 400 (5) Excellent hFE linearity hFE

TTA1586FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) TTA1586FU Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 120 to 400 Low noise NF = 1dB (typ.), 10dB (max) Comple

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collecto

Ordering number EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C Collector B Base E Emitter ( ) 2SA1580 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 4 0.2 2 0.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.5 0.1 1.6 0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05

Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transist

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain High Voltage and High Current A L Complementary to 2SC4116 3 3 Small Package Top View C B 1 1 2 2 K E APPLICATIONS General Purpose Amplifi

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1585BC (9AW) TO-92 BCE Marking CSA 1585 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 40 V Collector Emitter Voltage BVCEO 20 V Emitter Base Voltage BVEBO 6.0 V Col

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CDA1585BC (9AW) TO-92 BCE Marking CDA 1585 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 20 V Collector Emitter Voltage BVCEO 20 V Emitter Base Voltage BVEBO 6.0 V Col

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll

SEMICONDUCTOR KRA157F KRA159F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _

2SA1 58 6 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter

A1587 PNP silicon APPLICATION Audio Frequency General Purpose Amplifier Applications. SOT-323 MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector Current IC -100 mA Emitter Current IB -20 mA Collector Power Dissipati

A1585 APPLICATION Low Frequency Amplifier Applications. PNP silicon MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT SOT-89 Collector-base voltage -20 V VCBO 1. BASE Collector-emitter voltage -20 V VCEO 1 2. COLLECTOR Emitter-base voltage -6 V VEBO 2 Collector current -2 A IC 3 3. EMITTER Collector Power Dissip

A1588 APPLICATION Audio Frequency Low Power Amplifier Applications. PNP silicon Driver Stage Amplifier Applications. MAXIMUM RATINGS Ta 25 SOT-323 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA 1 Collector Pow

A1586 PNP silicon APPLICATION Audio Frequency General Purpose Amplifier Applications. MAXIMUM RATINGS Ta 25 SOT-323 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA 1 Collector Power Dissipation PC 100 mW 2 Junction

A1585S PNP Silicon PNP Transistors APPLICATION Low Frequency Applications. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT VCBO -20 V Collector-base voltage VCEO -20 V Collector-emitter voltage VEBO -6 V Emitter-base voltage Ic -2 A Collector current Icp -5 A Collector current (Pluse) Pc 0.4 Collector Power Dissipation W

SMD Type Transistors PNP Transistors 2SA1588 Features Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector

SMD Type Transistors PNP Transistors 2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec

SMD Type Transistors PNP Transistors 2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC

SMD Type or SMD Type TransistICs PNP Transistors 2SA1580 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High fT. Small reverse transfer capacitance. 1 2 +0.1 +0.05 0.95 -0.1 Adoption of FBET process. 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SC4104 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base vo

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica