A159 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A159 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hFE): 240
Encapsulados: TO18
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A159 datasheet
0.2. Size:155K sanyo
2sa1592.pdf 
Ordering number EN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2045B Features [2SA1592/2SC4134] Adoption FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package
0.4. Size:112K sanyo
2sa1593 2sc4135.pdf
Ordering number ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions Power supplies, relay derivers, lamp drivers. unit mm 2045B Features [2SA1593/2SC4135] Adoption of FBET, MBIT processes. 6.5 2.3 5.0 0.5 High breakdown voltage and large current capacity. 4 Fast switching speed.
0.5. Size:295K onsemi
2sa1593s-e 2sa1593s 2sa1593t-e 2sa1593t 2sc4135s-e 2sc4135s 2sc4135t-e 2sc4135t.pdf
Ordering number EN2511B 2SA1593/2SC4135 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
0.6. Size:388K onsemi
2sa1593 2sc4135.pdf
Ordering number EN2511B 2SA1593/2SC4135 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
0.7. Size:150K jmnic
2sa1598.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1598 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em
0.8. Size:150K jmnic
2sa1599.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1599 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em
0.9. Size:337K kec
kra157f kra158f kra159f.pdf
SEMICONDUCTOR KRA157F KRA159F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _
0.10. Size:386K kec
kra157f-kra159f.pdf
SEMICONDUCTOR KRA157F KRA159F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0
0.11. Size:314K shindengen
2sa1598.pdf
SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1598 Case ITO-220 Unit mm (TP7T4) -7A PNP RATINGS
0.12. Size:289K shindengen
2sa1599.pdf
SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1599 Case ITO-220 Unit mm (TP10T4) -10A PNP RATINGS
0.13. Size:193K inchange semiconductor
2sa1598.pdf
isc Silicon PNP Power Transistor 2SA1598 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -3.5A CE(sat) C Large Current Capability-I = -7A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is idea
0.14. Size:237K inchange semiconductor
2sa1592.pdf
isc Silicon PNP Power Transistor 2SA1592 DESCRIPTION High breakdown voltage and large current capacity Fast switching speed Small and slim package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC4134 APPLICATIONS Power supplies,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
0.15. Size:237K inchange semiconductor
2sa1593.pdf
isc Silicon PNP Power Transistor 2SA1593 DESCRIPTION High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC4135 APPLICATIONS Power supplies, relay drivers,lamp drivers. ABSOLUTE MAXIMUM RATINGS(T
0.16. Size:208K inchange semiconductor
2sa1599.pdf
isc Silicon PNP Power Transistor 2SA1599 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -5A CE(sat) C Large Current Capability-I = -10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ideal
Otros transistores... 9400, A157, A157A, A157B, A158, A158A, A158B, A158C, 2N3906, A159B, A159C, A177, A178, A178A, A178B, A179, A179A
