A159 Datasheet, Equivalent, Cross Reference Search
Type Designator: A159
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 240
Noise Figure, dB: -
Package: TO18
A159 Transistor Equivalent Substitute - Cross-Reference Search
A159 Datasheet (PDF)
2sa1592.pdf
Ordering number:EN2510APNP/NPN Epitaxial Planar Silicon Transistors2SA1592/2SC4134High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2045BFeatures [2SA1592/2SC4134] Adoption FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Small and slim package
2sa1593 2sc4135.pdf
Ordering number:ENN2511APNP/NPN Epitaxial Planar Silicon Transistors2SA1593/2SC4135High-Voltage Switching ApplicationsApplications Package Dimensions Power supplies, relay derivers, lamp drivers. unit:mm2045BFeatures [2SA1593/2SC4135] Adoption of FBET, MBIT processes.6.52.35.00.5 High breakdown voltage and large current capacity. 4 Fast switching speed.
2sa1593s-e 2sa1593s 2sa1593t-e 2sa1593t 2sc4135s-e 2sc4135s 2sc4135t-e 2sc4135t.pdf
Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
2sa1593 2sc4135.pdf
Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
2sa1598.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1598 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
2sa1599.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1599 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
kra157f kra158f kra159f.pdf
SEMICONDUCTOR KRA157F~KRA159FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041_
kra157f-kra159f.pdf
SEMICONDUCTOR KRA157F~KRA159FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.0
2sa1598.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1598 Case : ITO-220Unit : mm(TP7T4)-7A PNPRATINGS
2sa1599.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1599 Case : ITO-220Unit : mm(TP10T4)-10A PNPRATINGS
2sa1598.pdf
isc Silicon PNP Power Transistor 2SA1598DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -3.5ACE(sat) CLarge Current Capability-I = -7ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is idea
2sa1592.pdf
isc Silicon PNP Power Transistor 2SA1592DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC4134APPLICATIONSPower supplies,relay drivers,lamp driversABSOLUTE MAXIMUM RATINGS(T =25)aS
2sa1593.pdf
isc Silicon PNP Power Transistor 2SA1593DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package permitting100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC4135APPLICATIONSPower supplies, relay drivers,lamp drivers.ABSOLUTE MAXIMUM RATINGS(T
2sa1599.pdf
isc Silicon PNP Power Transistor 2SA1599DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -5ACE(sat) CLarge Current Capability-I = -10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ideal
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
