AF114N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AF114N
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.075 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO44
Búsqueda de reemplazo de transistor bipolar AF114N
AF114N Datasheet (PDF)
draf114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114TDRA3114T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
draf114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114EDRA3114E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114YDRA3114Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1688-5
History: 2SA1688-5
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050