AF114N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AF114N  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.075 W

Tensión colector-base (Vcb): 32 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 75 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO44

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AF114N datasheet

 9.1. Size:223K  panasonic
 draf114t.pdf pdf_icon

AF114N

This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114T DRA3114T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of

 9.2. Size:224K  panasonic
 draf114e.pdf pdf_icon

AF114N

This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114E DRA3114E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Pac

 9.3. Size:225K  panasonic
 draf114y.pdf pdf_icon

AF114N

This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114Y DRA3114Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Packa

Otros transistores... AF108, AF109, AF109R, AF110, AF111, AF112, AF113, AF114, BC337, AF115, AF115N, AF116, AF116N, AF117, AF117N, AF118, AF121