AF114N Datasheet. Specs and Replacement
Type Designator: AF114N 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO44
AF114N Substitution
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AF114N datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114T DRA3114T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of ... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114E DRA3114E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Pac... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114Y DRA3114Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Packa... See More ⇒
Detailed specifications: AF108, AF109, AF109R, AF110, AF111, AF112, AF113, AF114, BC337, AF115, AF115N, AF116, AF116N, AF117, AF117N, AF118, AF121
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