AF143 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AF143
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO7
Búsqueda de reemplazo de transistor bipolar AF143
AF143 Datasheet (PDF)
draf143e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143EDRA3143E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf143x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143XDRA3143X in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf143z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143ZDRA3143Z in ML3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of sets, mount area reductio
draf143t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143TDRA3143T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: ZTX696B
History: ZTX696B
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050