AF200 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AF200  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 25 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Capacitancia de salida (Cc): 0.5 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO72

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AF200 datasheet

 0.1. Size:106K  renesas
haf2007l haf2007s.pdf pdf_icon

AF200

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:1501K  cn vbsemi
haf2007-90s.pdf pdf_icon

AF200

HAF2007-90S www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo

Otros transistores... AF190, AF192, AF193, AF194, AF195, AF196, AF197, AF198, TIP142, AF200U, AF201, AF201U, AF202, AF202L, AF202S, AF239, AF239S