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AF200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AF200
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 25 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Capacitancia de salida (Cc): 0.5 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO72
 

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AF200 Datasheet (PDF)

 0.1. Size:106K  renesas
haf2007l haf2007s.pdf pdf_icon

AF200

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:1501K  cn vbsemi
haf2007-90s.pdf pdf_icon

AF200

HAF2007-90Swww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mo

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD1801U | BUP34 | DTA143Z

 

 
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