AF200 Datasheet. Specs and Replacement

Type Designator: AF200  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 0.5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO72

 AF200 Substitution

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AF200 datasheet

 0.1. Size:106K  renesas

haf2007l haf2007s.pdf pdf_icon

AF200

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:1501K  cn vbsemi

haf2007-90s.pdf pdf_icon

AF200

HAF2007-90S www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo... See More ⇒

Detailed specifications: AF190, AF192, AF193, AF194, AF195, AF196, AF197, AF198, TIP142, AF200U, AF201, AF201U, AF202, AF202L, AF202S, AF239, AF239S

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