AM1011-070 Todos los transistores

 

AM1011-070 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM1011-070
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1000 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SO42
 

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AM1011-070 Datasheet (PDF)

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 am1011-070.pdf pdf_icon

AM1011-070

AM1011-070RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P = 70 W MIN. WITH 6.7 dB GAINOUT.400 x .400 2NLFL (S042)hermetically sealedORDER CODE BRANDINGAM1011-70 1011-70DESCRIPTIONPIN CONNECTIONThe AM1011-070

 5.1. Size:64K  st
 am1011-075.pdf pdf_icon

AM1011-070

AM1011-075RF & MICROWAVE TRANSISTORSL-BAND AVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2LFL (S036)hermetically sealed.P = 75 W MIN. WITH 9.2 dB GAINOUTORDER CODE BRANDINGAM1011-075 1011-75DESCRIPTIONPIN CONNE

 7.1. Size:59K  st
 am1011-300.pdf pdf_icon

AM1011-070

AM1011-300RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTING.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .600 2LFL (M207).P 325 W MIN. WITH 7.7 dB GAINOUT =hermetically sealed.1030/1090 MHZ OPERATIONBRANDINGORDER CODEAM1011-300AM1011-300PIN CONNECTION

 7.2. Size:54K  st
 am1011-500.pdf pdf_icon

AM1011-070

AM1011-500RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.P 500 W MIN. WITH 8.5 dB MIN.OUT =GAIN.10:1 LOAD VSWR CAPABILITY @ 10S.,1% DUTY.SIXPAC HERMETIC METAL/CERAMICPACKAGE.EMITTER SITE BALLASTED OVERLAY.400 x .600 2LFL (M198)GEOMETRYhermetically sealed.REFRACTORY/GOLD METALLIZATION.LOW THERMAL RESISTANCE ORDER CODEBRANDINGAM1011-500.INTERNAL INPUT/OUT

MOSTRAR MÁS

Otros transistores... AM0608-020 , AM0608-070 , AM0608-200 , AM0608-450 , AM0912-080 , AM0912-150 , AM0912-300 , AM1011-055 , 2SD1047 , AM1011-075 , AM1011-300 , AM1011-400 , AM1011-500 , AM1214-100 , AM1214-175 , AM1214-200 , AM1214-300 .

History: CFD2375 | NB211XG | UN221V

 

 
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