AM1214-175 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM1214-175
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 180 W
   Tensión colector-base (Vcb): 65 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 14 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1400 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: SO38

Búsqueda de reemplazo de transistor bipolar AM1214-175

AM1214-175 Datasheet (PDF)

..1. Size:95K st
am1214-175.pdf

AM1214-175RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT = 160 W MIN. WITH 7.3 dB GAINhermetically sealedORDER CODE BRANDINGAM1214-175 1214-175PIN CONNECTIONDESCRIPTI

7.1. Size:92K st
am1214-300.pdf

AM1214-300RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).P = 270 W MIN. WITH 6.3 dB GAINOUThermetically sealedORDER CODE BRANDINGAM1214-300 1214-300PIN CONNECTIONDESCRIP

7.2. Size:64K st
am1214-325.pdf

AM1214-325RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT 325 W MIN. WITH 6.4 dB GAIN hermetically sealed=ORDER CODE BRANDINGAM1214-325 1214-325PIN CONNECTIONDESCRIPTI

7.3. Size:57K st
am1214-200.pdf

AM1214-200RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 200 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (M205)hermetically sealedORDER CODE BRANDINGAM1214-200 1214-200PIN CONNECTIONDESCRIPTION

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

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