AM1214-300 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM1214-300  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 300 W

Tensión colector-base (Vcb): 65 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 18.7 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1300 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: SO38

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AM1214-300 datasheet

 ..1. Size:92K  st
 am1214-300.pdf pdf_icon

AM1214-300

AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) .P = 270 W MIN. WITH 6.3 dB GAIN OUT hermetically sealed ORDER CODE BRANDING AM1214-300 1214-300 PIN CONNECTION DESCRIP

 6.1. Size:64K  st
 am1214-325.pdf pdf_icon

AM1214-300

AM1214-325 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) .POUT 325 W MIN. WITH 6.4 dB GAIN hermetically sealed = ORDER CODE BRANDING AM1214-325 1214-325 PIN CONNECTION DESCRIPTI

 7.1. Size:57K  st
 am1214-200.pdf pdf_icon

AM1214-300

AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 200 W MIN. WITH 7.0 dB GAIN OUT = .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING AM1214-200 1214-200 PIN CONNECTION DESCRIPTION

 7.2. Size:95K  st
 am1214-175.pdf pdf_icon

AM1214-300

AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2LFL (S038) .POUT = 160 W MIN. WITH 7.3 dB GAIN hermetically sealed ORDER CODE BRANDING AM1214-175 1214-175 PIN CONNECTION DESCRIPTI

MOSTRAR MÁS

Otros transistores... AM1011-070, AM1011-075, AM1011-300, AM1011-400, AM1011-500, AM1214-100, AM1214-175, AM1214-200, S8550, AM1214-325, AM1416-100, AM1416-200, AM1517-012, AM1517-025, AM2729-110, AM2729-125, AM2931-110