AM81214-060 Todos los transistores

 

AM81214-060 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM81214-060
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 63 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1400 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: SO42
 

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AM81214-060 Datasheet (PDF)

 ..1. Size:95K  st
 am81214-060.pdf pdf_icon

AM81214-060

AM81214-060RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGEDIZED VSWR :1.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042)hermetically sealed.POUT 55 W MIN. WITH 6.6 dB GAIN=ORDER CODE BRANDINGAM81214-060 81214-60DESCRIPTIONPIN C

 5.1. Size:94K  st
 am81214-030.pdf pdf_icon

AM81214-060

AM81214-030RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGEDIZED VSWR:1.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.310 x .310 2LFL (S064)hermetically sealed.P = 26 W MIN. WITH 7.2 dB GAINOUTORDER CODE BRANDINGAM81214-030 81214-30DESCRIPTIONPIN CO

 5.2. Size:61K  st
 am81214-006.pdf pdf_icon

AM81214-060

AM81214-006RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.310 x .310 2LFL (S064).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.POUT 5.5 W MIN. WITH 10 dB GAIN=ORDER CODE BRANDINGAM81214-6 81214-6PIN CONNECTIONDESCRIPTIO

 7.1. Size:64K  st
 am81214.pdf pdf_icon

AM81214-060

AM81214-015RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.310 x .310 2LFL (S064).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 14.5 W MIN. WITH 8.6 dB GAINOUT =ORDER CODE BRANDINGAM 81214-015 81214-15PIN CONNECTIONDES

MOSTRAR MÁS

Otros transistores... AM80814-025 , AM80912-005 , AM80912-015 , AM80912-030 , AM80912-085 , AM81214-006 , AM81214-015 , AM81214-030 , TIP127 , AM81416-020 , AM81719-030 , AM81719-040 , AM81720-012 , AM82223-010 , AM82325-040 , AM82325-050 , AM82731-003 .

 

 
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