AM83135-015 Todos los transistores

 

AM83135-015 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM83135-015
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3500 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SO64
 

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AM83135-015 Datasheet (PDF)

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 am83135-015.pdf pdf_icon

AM83135-015

AM83135-015RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 15 W MIN. WITH 5.2 dB GAINOUT =.310 x .310 2LFL (S064)ORDER CODE BRANDINGDESCRIPTION AM83131-015 83135-15The AM83135-015 device is a high po

 4.1. Size:78K  st
 am83135-01.pdf pdf_icon

AM83135-015

AM83135-001RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).P = 1.0 W MIN. WITH 5.2 dB GAINOUThermetically sealedORDER CODEBRANDINGAM83135-00183135-1DESCRIPTIONPIN C

 5.1. Size:57K  st
 am83135-03.pdf pdf_icon

AM83135-015

AM83135-030RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 5.5 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-030 AM83135-30DESCRIPTIONThe AM83135

 5.2. Size:44K  st
 am83135-04.pdf pdf_icon

AM83135-015

AM83135-040RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 40 W MIN. WITH 5.1 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-040 AM83135-40DESCRIPTIONThe AM83135

MOSTRAR MÁS

Otros transistores... AM82731-006 , AM82731-012 , AM82731-025 , AM82731-050 , AM83135-001 , AM83135-003 , AM83135-005 , AM83135-010 , 2222A , AM83135-030 , AM83135-040 , AM83135-050 , AR220GY , ASX11 , ASX12 , ASY10 , ASY11 .

 

 
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