BC178AP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BC178AP
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 125
   Paquete / Cubierta: TO92

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BC178AP Datasheet (PDF)

9.1. Size:86K st
bc177-bc178-bc179.pdf

BC177BC178-BC179LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC177, BC178 and BC179 are silicon planarepitaxial PNP transistors in TO-18 metal case.Theyare suitable for use in driver audio stages, low noiseinput audio stages and as low power, high gaingeneral purpose transistors. The complementaryNPN types are respectively the BC107, BC108 andBC109.TO-18INTER

9.2. Size:269K siemens
bc177 bc178 bc179.pdf

9.3. Size:144K tesla
bc157vi-a bc158vi-a-b bc159a-b bc177v-vi-a-b bc178v-vi-a-b bc179a-b kc307a-b-v kc308a-b-c kc309f-b-c kc636 kc638 kc640 kf423 kf470 kf517.pdf

9.4. Size:89K cdil
bc177 bc178 bc179 a b .pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BC177 BC178 BC179 UNITCollector -Emitter Voltage VCEO 45 25 20 VCollector -Emitter Voltage VCES 50 30 25 VCollector -Base Voltage VCBO 50 30 25 VEmitter

9.5. Size:225K microelectronics
bc177 bc178 bc179 bc257 bc258 bc259 bc307 bc308 bc309 bc320 bc321 bc322.pdf