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BC182B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC182B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 240
   Paquete / Cubierta: TO92

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BC182B Datasheet (PDF)

 ..1. Size:27K  fairchild semi
bc182b.pdf

BC182B
BC182B

BC182BNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vol

 9.1. Size:111K  motorola
bc182 bc183 bc184.pdf

BC182B
BC182B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC182/DAmplifier TransistorsBC182,A,BNPN SiliconBC183BC184COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC182 183 184Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitterBase Voltage

 9.2. Size:47K  fairchild semi
bc182.pdf

BC182B
BC182B

BC182NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Volt

 9.3. Size:27K  fairchild semi
bc182lb.pdf

BC182B
BC182B

BC182LBNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vo

 9.4. Size:26K  fairchild semi
bc182l.pdf

BC182B
BC182B

BC182LNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vol

 9.5. Size:60K  onsemi
bc182-b.pdf

BC182B
BC182B

BC182, BC182BAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com These are Pb-Free Devices*COLLECTOR12BASEMAXIMUM RATINGS3Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO 50 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcTO-92Collector Current - Continuous IC 100 mAdcCASE 29Total Device Dissipation @ TA = 25C

 9.6. Size:112K  cdil
bc182 bc183 bc184.pdf

BC182B
BC182B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC182, A, BNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC183, A, B, CBC184, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC182 BC183 BC184 UNITSCollector Emitter

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