Биполярный транзистор BC182B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC182B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 240
Корпус транзистора: TO92
BC182B Datasheet (PDF)
bc182b.pdf
BC182BNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vol
bc182 bc183 bc184.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC182/DAmplifier TransistorsBC182,A,BNPN SiliconBC183BC184COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC182 183 184Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitterBase Voltage
bc182.pdf
BC182NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Volt
bc182lb.pdf
BC182LBNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vo
bc182l.pdf
BC182LNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vol
bc182-b.pdf
BC182, BC182BAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com These are Pb-Free Devices*COLLECTOR12BASEMAXIMUM RATINGS3Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO 50 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcTO-92Collector Current - Continuous IC 100 mAdcCASE 29Total Device Dissipation @ TA = 25C
bc182 bc183 bc184.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC182, A, BNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC183, A, B, CBC184, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC182 BC183 BC184 UNITSCollector Emitter
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
