BC307C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC307/DAmplifier TransistorsBC307,B,CPNP SiliconBC308CCOLLECTORBC309B12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC307 308C 309Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 25 25 VdcCollectorBase Voltage VCBO 50 30 30 VdcE

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D186BC307; BC307BPNP general purpose transistors1997 Mar 07Product specificationFile under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BC307; BC307BFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 base

BC307/308/309Switching and Amplifier Applications Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC307 -50 V: BC308/309 -30 VVCEO Collector-Emitter Voltage: BC307 -45 V: BC308/309 -25 VVEBO Emitter-Base Volta

BC307/308/309 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC309 TO-92ABSOLUTE MAXIMUM RATINGS (T =25C)A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES: BC307 -50 V: BC308/309 -30 VCollector-Emitter Voltage VCEO : BC307 -45 V: BC308/309 -25 VEmitter-Base Voltage VEBO -5 VCollector Current (DC) IC mA-100Co

BC307BAmplifier TransistorsPNP SiliconFeatures This is a Pb-Free Device*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO -45 VdcCollector - Base Voltage VCBO -50 Vdc3EMITTEREmitter - Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -100 mAdcTotal Device Dissipation @ TA = 25C PD 350 mWDe

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, CBC 308, A, B, CBC 309, A, B, CTO-92Plastic PackageGeneral Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio FrequenciesABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC307

SEMICONDUCTOR BC307/8/9TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.LOW NOISE AMPLIFIER APPLICATION. B CFEATURES High Voltage : BC307 VCEO=-45V.Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)N DIM MILLIMETERS(VCE=-6V, IC=-0.1mA, f=1kHz).A 4.70 MAXEKFor Complementary With NPN type BC237/238/239. G B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.2

BC307/308/309(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Emitter Voltage BC307 -45 VCEO V BC308/309 -25 Emitter-Base Voltage BC307 -6 VEBO V BC308/309 -5 Collector Current -Continuous -0.1 IC A Collec