BC477
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC477
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36
W
Tensión colector-base (Vcb): 90
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO18
Búsqueda de reemplazo de transistor bipolar BC477
BC477
Datasheet (PDF)
..1. Size:139K st
bc477 bc478 bc479.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
..2. Size:94K cdil
bc477.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR BC477TO-18General Purpose Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION SYMBOL VALUE UNITVCES 90 VCollector -Emitter VoltageVCEO 80 VCollector -Emitter VoltageVEBO 6.0 VEmitter Base VoltageIC 150 mACollector Current Ptot 0.3Pow
0.1. Size:10K semelab
bc477ycsm.pdf
BC477YCSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 80V A =(0.04 0.004
0.2. Size:10K semelab
bc477dcsm.pdf
BC477DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.05
0.3. Size:10K semelab
bc477ydcsm.pdf
BC477YDCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.0
0.4. Size:10K semelab
bc477xdcsm.pdf
BC477XDCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.0
0.5. Size:10K semelab
bc477b.pdf
BC477BDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 80V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
