BC516 Todos los transistores

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 bc516.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2

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 bc516 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2

 ..3. Size:25K  fairchild semi
 bc516.pdf

BC516 PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage

 ..4. Size:339K  kec
 bc516.pdf

SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K MAXIMUM RATING (Ta=25 ) G B 4.80 MAX C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F