DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC516PNP Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationPNP Darlington transistor BC516FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC516PNP Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationPNP Darlington transistor BC516FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

BC516PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage

SEMICONDUCTOR BC516TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.B CN DIM MILLIMETERSA 4.70 MAXEKMAXIMUM RATING (Ta=25 ) G B 4.80 MAXC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45VCEO -30 VCollector-Emitter Voltage_H J 14.00 + 0.50K 0.55 MAXF F