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BC550 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC550

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Ganancia de corriente contínua (hfe): 240

Empaquetado / Estuche: TO92

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BC550 Datasheet (PDF)

..1. bc549 bc550.pdf Size:110K _motorola

BC550
BC550

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC549B/DLow Noise TransistorsNPN SiliconBC549B,CBC550B,CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating S

..2. bc549 bc550 3.pdf Size:49K _philips

BC550
BC550

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC549; BC550NPN general purpose transistors1999 Apr 22Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationNPN general purpose transistors BC549; BC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS

..3. bc549 bc550.pdf Size:231K _philips

BC550
BC550

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BC549; BC550NPN general purpose transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 22NXP Semiconductors Product data sheetNPN general purpose transistors BC549; BC550FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS3 colle

..4. bc546 bc547 bc548 bc549 bc550.pdf Size:44K _fairchild_semi

BC550
BC550

BC546/547/548/549/550Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546 80 V: BC547/550 50 V: BC548/549 30 VVCE

..5. bc549 bc550.pdf Size:355K _cdil

BC550
BC550

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC549,A.B,CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC550,A,B,CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCLow Noise TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC549 BC550 UNITSCollector Emitter Voltage VCEO 30 45 V

0.1. bc549b-c bc550b-c.pdf Size:52K _diodes

BC550
BC550

Low Noise TransistorsBC549B,CNPN SiliconBC550B,CMAXIMUM RATINGSRating Symbol BC549 BC550 UnitCollectorEmitter Voltage VCEO 30 45 VdcCollectorBase Voltage VCBO 30 50 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 100 mAdc1Total Device Dissipation @ TA = 25C PD 625 mW2Derate above 25C 5.0 mW/C 3Total Device Dissipation @ TC = 25

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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