BC556VI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC BC BC3556 557 558Rating Symbol UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 65 45 30 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 80 50 30 Vdc

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC556; BC557PNP general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationPNP general purpose transistors BC556; BC557FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS

BC556/557/558/559/560Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC556B, BC557A, B, C,BC558BAmplifier TransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS 2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc3BC556 -65EMITTERBC557 -45BC558 -30Collector - Base Voltage VCBO VdcBC556 -80BC557 -50BC558 -30TO-92Emitter - Base Voltage VEBO -5.0 Vdc CASE

SBC556SemiconductorSemiconductorPNP Silicon TransistorDescriptions General purpose application Switching applicationFeatures High voltage : VCEO=-55V Complementary pair with SBC546Ordering InformationType NO. Marking Package Code SBC556 SBC556 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54 Typ.

BC556, B, CBC557, A, B, CElektronische BauelementeBC558, A, B, CRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free TO-92PNP Transistor FEATURES Power dissipation PCM: 0.625 W (Tamb=25) Collector current ICM: - 0.1 A 1 Collector-base voltage 23 VCBO: BC556 -80 V BC557 -50 V 1 2 3 BC558 -30 V Operating and storage junction temp

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORSBC557, A, B, CBC558, A, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC556 BC557 BC558 UNITSCollector Emi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 BC556/BC557/BC558 TRANSISTOR (PNP) FEATURES High Voltage1. COLLECTOR Complement to BC546,BC547,BC548 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitBC556 -80VCBO Collector-Base Voltage BC557 -50 V BC558 -30BC556 -6

SEMICONDUCTOR BC556/7/8TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .B CFEATURESFor Complementary With NPN Type BC546/547/548.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_H J 14.00 + 0.50BC556 -80K 0.55 M

BC556/557/558(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30-65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeter

BC556, A/BBC557, A/B/CBC558, A/B/CPNP General Purpose TransistorCOLLECTOR3P b Lead(Pb)-Free2BASE1231EMITTERTO-92Maximum Ratings ( T =25 C unless otherwise noted)ARating Symbol BC556 BC557 BC558 UnitV -65 -45Collector-Emitter Voltage ECO -30V-30VCollector-Base Voltage CBO -80 -50 VVEBOEmitter-Base Voltage -5 -5 -5 Vl 100Collector Curre

DIP Type TransistorsPNP TransistorsBC556 ~ BC558 (KC556 ~ KC558)Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V/-45V/-30V0.60 Max0.45 0.1 0.5COLLECTOR121 321.CollectorBASE2.Base1.273.Emitter2.543EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol BC556

BC556xBK ... BC559xBKBC556xBK ... BC559xBKGeneral Purpose Si-Epitaxial PlanarTransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-070.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial