BC556VI - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 65 45 30 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 80 50 30 Vdc

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS

BC556/557/558/559/560 Switching and Amplifier High Voltage BC556, VCEO= -65V Low Noise BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC556 -80 V BC557/560 -50 V BC558/559 -30 V

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE

SBC556 Semiconductor Semiconductor PNP Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=-55V Complementary pair with SBC546 Ordering Information Type NO. Marking Package Code SBC556 SBC556 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06 0.1 1.27 Typ. 2.54 Typ.

BC556, B, C BC557, A, B, C Elektronische Bauelemente BC558, A, B, C RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 PNP Transistor FEATURES Power dissipation PCM 0.625 W (Tamb=25 ) Collector current ICM - 0.1 A 1 Collector-base voltage 2 3 VCBO BC556 -80 V BC557 -50 V 1 2 3 BC558 -30 V Operating and storage junction temp

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 BC556/BC557/BC558 TRANSISTOR (PNP) FEATURES High Voltage 1. COLLECTOR Complement to BC546,BC547,BC548 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit BC556 -80 VCBO Collector-Base Voltage BC557 -50 V BC558 -30 BC556 -6

SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 M

BC556/557/558(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30 -65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeter

BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Curre

DIP Type Transistors PNP Transistors BC556 BC558 (KC556 KC558) Unit mm TO-92 4.8 0.3 3.8 0.3 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V/-45V/-30V 0.60 Max 0.45 0.1 0.5 COLLECTOR 1 2 1 3 2 1.Collector BASE 2.Base 1.27 3.Emitter 2.54 3 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol BC556

BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2009-12-07 0.1 Power dissipation Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Geh usematerial