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BC856AWT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC856AWT1
   Código: 3A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT323
 

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BC856AWT1 Datasheet (PDF)

 0.1. Size:254K  lrc
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BC856AWT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 6.1. Size:251K  motorola
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BC856AWT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856AWT1/DGeneral Purpose TransistorsBC856AWT1,BWT1PNP SiliconBC857AWT1,BWT1COLLECTOR BC858AWT1,BWT1,These transistors are designed for general purpose amplifier3applications. They are housed in the SOT323/SC70 which is CWT1designed for low power surface mount applications.1Motorola Preferred DevicesB

 7.1. Size:157K  nxp
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BC856AWT1

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter

 7.2. Size:401K  central
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BC856AWT1

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

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