BC856AWT1 - описание и поиск аналогов

 

BC856AWT1. Аналоги и основные параметры

Наименование производителя: BC856AWT1

Маркировка: 3A

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 300 MHz

Ёмкость коллекторного перехода (Cc): 6 pf

Статический коэффициент передачи тока (hFE): 180

Корпус транзистора: SOT323

 Аналоги (замена) для BC856AWT1

- подборⓘ биполярного транзистора по параметрам

 

BC856AWT1 даташит

 0.1. Size:254K  lrc
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BC856AWT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

 6.1. Size:251K  motorola
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BC856AWT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856AWT1/D General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 COLLECTOR BC858AWT1,BWT1, These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT 323/SC 70 which is CWT1 designed for low power surface mount applications. 1 Motorola Preferred Devices B

 7.1. Size:157K  nxp
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BC856AWT1

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

 7.2. Size:401K  central
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BC856AWT1

BC856W SERIES BC857W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

Другие транзисторы: BC850CR, BC850CW, BC850CWT1, BC856, BC856A, BC856ALT1, BC856AR, BC856AW, BD333, BC856B, BC856BLT1, BC856BR, BC856BW, BC856BWT1, BC857, BC857A, BC857ALT1

 

 

 

 

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