BC868 Todos los transistores

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product data sheet 2004 Nov 08 Supersedes data of 2003 Dec 02 NXP Semiconductors Product data sheet NPN medium power transistor; BC868 20 V, 1 A FEATURES QUICK REFERENCE DATA High current SYMBOL PARAMETER MIN. MAX. UNIT Two current gain selections VCEO collector-e

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor 1999 Apr 08 Product specification Supersedes data of 1998 Jul 16 Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 emitter 2 collector APPLICATIONS 3 base Genera

BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 18 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement Nexperia JEITA JEDEC BCP68 SOT223 SC-73 - BCP69 BC868 SOT89 SC-62 TO-243 BC869 BC68PA SO

BC868 TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mW TJ Junction Tempe

BC868 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-89 3. EMITTER 4.6 B 4.4 1.6 1.8 1.4 1.4 Features 2.6 4.25 High current 2.4 3.75 Low voltage 0.8 MIN 0.53 0.40 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage

FM120-M WILLAS THRU BC868 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package oSOT-89 utline TRANSISTOR (NPN) Features Batc FEATURES teh process design, excellent power dissipation offers bet r reverse leakage current and thermal resistance. SOD-123H High current

BC868 Plastic-Encapsulate NPN Transistors Encapsulate NPN Transistors FEATURES High current 1A SOT-89 PD Power Dissipation 500mW MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 32 V 2. COLLECTOR VCEO Collector-Emitter Voltage 20 V 3. EMITTER VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

BC868 TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mW TJ Junction Tempe