DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BC868NPN medium power transistor; 20 V, 1 AProduct data sheet 2004 Nov 08Supersedes data of 2003 Dec 02NXP Semiconductors Product data sheetNPN medium power transistor; BC86820 V, 1 AFEATURES QUICK REFERENCE DATA High currentSYMBOL PARAMETER MIN. MAX. UNIT Two current gain selectionsVCEO collector-e

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BC868NPN medium power transistor1999 Apr 08Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationNPN medium power transistor BC868FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collectorAPPLICATIONS3 base Genera

BCP68; BC868; BC68PA20 V, 2 A NPN medium power transistorsRev. 8 18 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITA JEDECBCP68 SOT223 SC-73 - BCP69BC868 SOT89 SC-62 TO-243 BC869BC68PA SO

BC868TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage 32 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mWTJ Junction Tempe

BC868 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR SOT-893. EMITTER 4.6B4.41.61.81.41.4Features2.64.25High current 2.43.75Low voltage 0.8MIN0.530.40MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.480.442x)0.13 B0.35 0.371.53.0Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage

FM120-M WILLASTHRUBC868 SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage oSOT-89 utlineTRANSISTOR (NPN) Features BatcFEATURES teh process design, excellent power dissipation offers bet r reverse leakage current and thermal resistance.SOD-123H High current

BC868Plastic-Encapsulate NPN TransistorsEncapsulate NPN Transistors FEATURES High current1A SOT-89PD Power Dissipation:500mW MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 32 V2. COLLECTOR VCEO Collector-Emitter Voltage 20 V3. EMITTER VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont

BC868TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage 32 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mWTJ Junction Tempe