BC869 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BC869PNP medium power transistor; 20 V, 1 AProduct data sheet 2004 Nov 08Supersedes data of 2003 Dec 02NXP Semiconductors Product data sheetPNP medium power transistor; BC86920 V, 1 AFEATURES QUICK REFERENCE DATA High currentSYMBOL PARAMETER MIN. MAX. UNIT Three current gain selectionsVCEO collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BC869PNP medium power transistor1999 Apr 08Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationPNP medium power transistor BC869FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collectorAPPLICATIONS3 base Low vo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP69; BC869; BC69PA20 V, 2 A PNP medium power transistorsRev. 7 12 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP69 SOT223 SC-73 - BCP68BC869 SOT89 SC-62 TO-243 BC868BC69PA SO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BC869 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR NPN Complement to BC868 Low Voltage 3. EMITTER High Current MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Volta

BC869TRANSISTOR (PNP) SOT-89-3L FEATURES NPN Complement to BC868 1. BASE Low Voltage 2. COLLECTOR High Current 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -32 V V Collector-Emitter Voltage -20 V CEOVEBO Emitter-Base Voltage -5 V I Collector Current -1 A CP Collector Power Dissi

BC869PNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. BASE 12. COLLECTOR233. EMITTERSOT-89MAXIMUM RATINGS ( TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO-32Collector-Base Voltage VVCEO-20 VCollector-Emitter VoltageVEBOVEmitter-Base Voltage -5.0Collector Current Continuous IC -1.0 APDmWTotal Device Dissipation TA=25C 500TJ+1

FM120-M WILLASTHRUBC86 SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTRA

BC869PNP Medium Power TransistorPNP Medium Power Transistor Features High current. Three current gain selections. 1.2 W total power dissipation. *1.Refer to SOT89 standard mounting conditions. *2.Device mounted on an FR4 printed-circuit board, singlecircuit board, single-sided copper, tin-plated footprint. *3.Device mounted on an FR4 printed-circuit board, single plated, mou