BC869 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet 2004 Nov 08 Supersedes data of 2003 Dec 02 NXP Semiconductors Product data sheet PNP medium power transistor; BC869 20 V, 1 A FEATURES QUICK REFERENCE DATA High current SYMBOL PARAMETER MIN. MAX. UNIT Three current gain selections VCEO collector

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1998 Jul 16 Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 emitter 2 collector APPLICATIONS 3 base Low vo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NPN complement Nexperia JEITA JEDEC BCP69 SOT223 SC-73 - BCP68 BC869 SOT89 SC-62 TO-243 BC868 BC69PA SO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BC869 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR NPN Complement to BC868 Low Voltage 3. EMITTER High Current MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Volta

BC869 TRANSISTOR (PNP) SOT-89-3L FEATURES NPN Complement to BC868 1. BASE Low Voltage 2. COLLECTOR High Current 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -32 V V Collector-Emitter Voltage -20 V CEO VEBO Emitter-Base Voltage -5 V I Collector Current -1 A C P Collector Power Dissi

BC869 PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 1 2. COLLECTOR 2 3 3. EMITTER SOT-89 MAXIMUM RATINGS ( TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO -32 Collector-Base Voltage V VCEO -20 V Collector-Emitter Voltage VEBO V Emitter-Base Voltage -5.0 Collector Current Continuous IC -1.0 A PD mW Total Device Dissipation TA=25 C 500 TJ +1

FM120-M WILLAS THRU BC86 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TRA

BC869 PNP Medium Power Transistor PNP Medium Power Transistor Features High current. Three current gain selections. 1.2 W total power dissipation. *1.Refer to SOT89 standard mounting conditions. *2.Device mounted on an FR4 printed-circuit board, single circuit board, single-sided copper, tin-plated footprint. *3.Device mounted on an FR4 printed-circuit board, single plated, mou