BCP53-10T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BCP53-10T1
   Código: AH-10
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 63
   Paquete / Cubierta: SOT223

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BCP53-10T1 Datasheet (PDF)

..1. Size:135K onsemi
bcp53t1 bcp53-10t1 bcp53-16t1.pdf

BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR

0.1. Size:143K onsemi
bcp53t1g bcp53-10t1g bcp53-16t1g.pdf

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

0.2. Size:618K onsemi
bcp53-16t1g bcp53-16t3g bcp53t1g bcp53-10t1g sbcp53-10t1g sbcp53-16t1g.pdf