BCP53-10T1 Datasheet, Equivalent, Cross Reference Search

   Type Designator: BCP53-10T1
   SMD Transistor Code: AH-10
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: SOT223

BCP53-10T1 Transistor Equivalent Substitute - Cross-Reference Search

BCP53-10T1 Datasheet (PDF)

..1. Size:135K onsemi
bcp53t1 bcp53-10t1 bcp53-16t1.pdf

BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR

0.1. Size:143K onsemi
bcp53t1g bcp53-10t1g bcp53-16t1g.pdf

BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

0.2. Size:618K onsemi
bcp53-16t1g bcp53-16t3g bcp53t1g bcp53-10t1g sbcp53-10t1g sbcp53-16t1g.pdf